Free resource for electronic component datasheets

Chip data Inventory inquiry Alternative model

HGT1S10N120BNS Datasheet, PDF

  • Manufacturer model: HGT1S10N120BNS
  • Function description: IGBT 1200V 35A 298W TO263AB
  • Manufacturer: onsemi
  • Data sheet:
  • Category: Transistors - IGBTs - Single

HGT1S10N120BNS Suppliers

*Submit information and send RFQ to all vendors on the following list

No Date

    HGT1S10N120BNS Similar Part

    • HGT1S10N120BNS IGBT, 35A, 1200V, N-CHANNEL, TO- Fairchild Semiconductor 1839 0
    • HGT1S10N120BNST IGBT 1200V 35A 298W TO263AB onsemi 5773 2.85
    • HGT1S10N120BNS IGBT 1200V 35A 298W TO263AB onsemi 5773 3.31069
    • HGT1S10N120BNS IGBT, 1200V, NPT, 800-TUBE ON Semiconductor 15780 3.91
    • HGT1S10N120BNS IGBT, 1200V, NPT 安森美-ON 23561 0
    • HGT1S10N120BNS IGBT, 1200V, NPT, 800-TUBE onsemi 2744 3.91
    • HGT1S10N120BNS Rochester Electronics LLC 15776 0
    • HGT1S10N120BNST Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation 27080 2.87

    HGT1S10N120BNS Chip related model

    Business contact email: info@finddatasheet.com