HGT1S10N120BNST Datasheet, PDF
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- Manufacturer model: HGT1S10N120BNST
- Function description: Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN
- Manufacturer: Fairchild Semiconductor Corporation
- Data sheet: -
- Category: IGBTs
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