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PDTD113ZT,215
Nexperia
PDTD113ZT - 50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB Trans Digital BJT NPN 50V 500mA 250mW Automotive 3-Pin SOT-23 T/R NPN - Pre-Biased 250mW 500mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS BRT TRANSISTOR, NPN, 50V, 500MA, 1KOHM / 10KOHM, 3-SOT-23; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:500mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:10 ;RoHS Compliant: Yes
- PDF:
- Package: TO-236-3
- ROHS:
- Status: RELEASED FOR SUPPLY
- Stock: 2028
- Series: -
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Nexperia USA Inc PDTD113ZT,215
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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 250 mW Surface Mount TO-236AB
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