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UF630G-TN3-R Datasheet, PDF

  • Manufacturer model: UF630G-TN3-R
  • Function description: Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3
  • Manufacturer: Unisonic Technologies Co Ltd
  • Data sheet:
  • Category: Power Field-Effect Transistors

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UF630G-TN3-R Similar Part

  • UF630G-TN3-R Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 Unisonic Technologies Co Ltd 5569 0
  • UF630G-TN3-R MOS场效应管 UF630G-TN3-R TO-252 N沟道,200V,9A,400mΩ@10V 友顺(UTC) 8607 0.8421

UF630G-TN3-R Chip related model

UF630G-TN3-R Alternate Parts

STD4N25T4 FS10ASH-03 STD6N10T4 2SK3992-ZK-E1 STD2NA60T4 FS10ASH-06 FS30ASJ-06 2SK1672 SQD50N02-04-GE3 STD17N06T4 FS30ASH-2 AP09N20H-HF AP09N20J AP09N20J-HF AP09N20H UF630L-TM3-T UF630G-TN3-T UF630L-TN3-R SFF230/5 UF630G-T2Q-T

UF630G-TN3-R Related Specifications

6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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