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MGFS45V2527-51 Datasheet, PDF

  • Manufacturer model: MGFS45V2527-51
  • Function description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN
  • Manufacturer: Mitsubishi Electric
  • Data sheet:
  • Category: RF Power Field-Effect Transistors

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    MGFS45V2527-51 Similar Part

    • MGFS45V2527-51 RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN Mitsubishi Electric 17344 0

    MGFS45V2527-51 Chip related model

    MGFS45V2527-51 Alternate Parts

    TPM2323-30 TPM2323-14 MGFS45V2527 FLM2527L-20 TPM2323-60 NES2527B-30 NES2527B-30 NES2527B-30 MGFS45V2527-01

    MGFS45V2527-51 Related Specifications

    6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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