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MGFS45B2527B Datasheet, PDF

  • Manufacturer model: MGFS45B2527B
  • Function description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL CERAMIC, GF-60, 2 PIN
  • Manufacturer: Mitsubishi Electric
  • Data sheet:
  • Category: RF Power Field-Effect Transistors

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MGFS45B2527B Similar Part

  • MGFS45B2527B 2.5-2.7 GHz BAND / 30W 三菱-MITSUBISHI 28870 0
  • MGFS45B2527B RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL CERAMIC, GF-60, 2 PIN Mitsubishi Electric 17228 0

MGFS45B2527B Chip related model

MGFS45B2527B Alternate Parts

MGFC42V5964A-01 MGFC44V5964 TIM4450-4SL MGFC44V3642-01 MGFC41V3642 MGFC41V5964 MGFC40V3742A TIM5964-16L MGFC40V6472A MGFC44V3642 MGFS45V2325A MGFC41V7177 MGFC40V4450-51 MGFC42V6472A-51 MGFC40V4450A MGFS45V2527 MGFC44V3642-51 MGFS45V2123 MGFS45V2123A MGFC42V4450A

MGFS45B2527B Related Specifications

6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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