Function description:RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN
Manufacturer:Mitsubishi Electric
Data sheet:
Category:RF Power Field-Effect Transistors
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MGFS44V2527-51
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN
Mitsubishi Electric
17321
0
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