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MGFC42V5964A Datasheet, PDF

  • Manufacturer model: MGFC42V5964A
  • Function description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN
  • Manufacturer: Mitsubishi Electric
  • Data sheet:
  • Category: RF Power Field-Effect Transistors

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MGFC42V5964A Similar Part

  • MGFC42V5964A RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN Mitsubishi Electric 13737 0
  • MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET 三菱-MITSUBISHI 9169 0
  • MGFC42V5964A-01 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET Mitsubishi Electric 17217 0
  • MGFC42V5964A-51 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET Mitsubishi Electric 17256 0

MGFC42V5964A Chip related model

MGFC42V5964A Alternate Parts

TIM5964-30L-251 TIM5964-35SL TIM5964-30SL TIM5867-30UL TIM5964-35SLA TIM6472-16UL TIM4450-35SL TIM5964-16SL TIM5964-25UL TIM7785-60UL TIM4450-16UL TIM4450-60SL TIM5964-35SLA-151 TIM5964-16L-151 MGFC44V4450 MGFC42V5964A-01 MGFC42V5964 MGFC42V5964-51 MGFC42V5964-01 MGFC42V5964A-51

MGFC42V5964A Related Specifications

6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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