MGFC40V7785 IC Information manufacturer 三菱-MITSUBISHI

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MGFC40V7785 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET 三菱-MITSUBISHI 9188 0
MGFC40V7785B 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET 三菱-MITSUBISHI 9393 0
MGFC40V7785A 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET 三菱-MITSUBISHI 9462 0
MGFC40V7785-51 RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN Mitsubishi Electric 17270 0
MGFC40V7785B-01 RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET Mitsubishi Electric 17274 0
MGFC40V7785A-51 RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET Mitsubishi Electric 17276 0
MGFC40V7785A-01 RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET Mitsubishi Electric 17281 0
MGFC40V7785B-51 RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET Mitsubishi Electric 17282 0
MGFC40V7785 RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN Mitsubishi Electric 17313 0
MGFC40V7785A RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN Mitsubishi Electric 13740 0