JANS2N7236 IC Information manufacturer Defense Logistics Agency

Manufacturer model: JANS2N7236
Function description: Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
Manufacturer: Defense Logistics Agency
Data sheet:
Category: Power Field-Effect Transistors

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JANS2N7236 TRANSISTOR 18 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED PACKAGE-3, FET General Purpose Power Defense Supply Center Columbus 18743 0
JANS2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Defense Logistics Agency 18790 0
JANS2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Microsemi FPGA & SoC 5821 0
JANS2N7236 infineon 18997 0
JANS2N7236U infineon 19115 0
JANS2N7236U HiRel MOSFETs 英飞凌-Infineon 25798 0
JANS2N7236U Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN Infineon Technologies AG 18740 0
JANS2N7236U Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN Infineon Technologies AG 5823 0
JANS2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG 5824 0
JANS2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Defense Logistics Agency 5800 0