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IXFH320N10T2 Datasheet, PDF

  • Manufacturer model: IXFH320N10T2
  • Function description: Power Field-Effect Transistor, 320A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
  • Manufacturer: IXYS Corporation
  • Data sheet: -
  • Category: Power Field-Effect Transistors

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IXFH320N10T2 Similar Part

  • IXFH320N10T2 MOSFET N-CH 100V 320A TO247AD IXYS 11233 16.09
  • IXFH320N10T2 N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options 艾赛斯-IXYS 4838 0
  • IXFH320N10T2 Power Field-Effect Transistor, 320A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation 7266 14.04
  • IXFH320N10T2 Power Field-Effect Transistor, 320A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation 17493 14.30667

IXFH320N10T2 Chip related model

IXFH320N10T2 Alternate Parts

IXFT320N10T2 IXFT320N10T2

IXFH320N10T2 Related Specifications

6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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