Free resource for electronic component datasheets

Chip data Inventory inquiry Alternative model

IRHM9130 Datasheet, PDF

  • Manufacturer model: IRHM9130
  • Function description: Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3
  • Manufacturer: Infineon Technologies AG
  • Data sheet:
  • Category: Power Field-Effect Transistors

IRHM9130 Suppliers

*Submit information and send RFQ to all vendors on the following list

No Date

    IRHM9130 Similar Part

    • IRHM9130 Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 International Rectifier 5782 0
    • IRHM9130 Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 Infineon Technologies AG 5815 0
    • IRHM9130U Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier 5819 0
    • IRHM9130UPBF Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier 5822 0
    • IRHM9130D Transistor Infineon Technologies AG 5828 0
    • IRHM9130D Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier 5830 0
    • IRHM9130DPBF Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier 5840 0
    • IRHM9130U Transistor Infineon Technologies AG 5847 0

    IRHM9130 Chip related model

    Business contact email: info@finddatasheet.com