IRF9Z14L Datasheet, PDF

• Manufacturer model: IRF9Z14L
• Function description: Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
• Manufacturer: Vishay Intertechnologies
• Data sheet:
• Category: Power Field-Effect Transistors

IRF9Z14L Suppliers

IRF9Z14L Similar Part

• IRF9Z14L MOSFET P-CH 60V 6.7A I2PAK Vishay Siliconix 18144 0
• IRF9Z14LPBF MOSFET P-CH 60V 6.7A I2PAK Vishay Siliconix 9436 0.8828
• IRF9Z14LPBF MOSFET P-Chan 60V 6.7 Amp Vishay / Siliconix 4975 0.846
• IRF9Z14L Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN Vishay Intertechnologies 3213 0
• IRF9Z14S/ SiHF9Z14S/ IRF9Z14L/ SiHF9Z14L Power MOSFET 威世-Vishay 19665 0
• IRF9Z14LPBF MOSFET P-Chan 60V 6.7 Amp 威世-Vishay 12501 0
• IRF9Z14LPBF Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier 23677 0
• IRF9Z14LPBF Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier 17644 0
• IRF9Z14LPBF Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 Vishay Huntington 17644 0
• IRF9Z14LPBF Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 Vishay 17647 0

IRF9Z14L Chip related model

IRF9Z14L Alternate Parts

IRF9Z14L Related Specifications