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IRF830SPBF Datasheet, PDF

  • Manufacturer model: IRF830SPBF
  • Function description: Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, SMD-220, D2PAK-3
  • Manufacturer: Vishay Huntington
  • Data sheet: -
  • Category: Power Field-Effect Transistors

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    IRF830SPBF Similar Part

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    • IRF830SPBF Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 International Rectifier 20612 2.14
    • IRF830SPBF Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, SMD-220, D2PAK-3 Vishay 17092 2.428
    • IRF830SPBF Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, SMD-220, D2PAK-3 Vishay Huntington 17095 2.428
    • IRF830SPBF Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 International Rectifier 17096 2.14

    IRF830SPBF Chip related model

    IRF830SPBF Alternate Parts

    SIHF830S-GE3 IRF830S SIHF830S-E3 SIHF830STRL-GE3 SIHF830STL-E3 SIHF830STL SIHF830S IRF830STRRPBF IRF830STRL IRF830STRLPBF IRF830STRR

    IRF830SPBF Related Specifications

    6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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