IRF130 IC Information manufacturer Harris Semiconductor

Manufacturer model: IRF130
Function description: Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Manufacturer: Harris Semiconductor
Data sheet:
Category: Power Field-Effect Transistors

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IRF130 Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier 10609 11.2
IRF130 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC 10610 11.2
IRF130 Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon 10610 11.2
IRF130 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products 10610 11.2
IRF130 infineon 19037 0
IRF130 Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor 16583 11.2
IRF130 Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor 4097 80.4149
IRF130 45A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited 4100 80.4149
IRF130 Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG 4101 80.4149
IRF1302S MOSFET N-CH 20V 174A D2PAK Infineon Technologies 14301 0