Free resource for electronic component datasheets

Chip data Inventory inquiry Alternative model

IRF1104PBF Datasheet, PDF

  • Manufacturer model: IRF1104PBF
  • Function description: Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
  • Manufacturer: Infineon Technologies AG
  • Data sheet:
  • Category: Power Field-Effect Transistors

IRF1104PBF Suppliers

*Submit information and send RFQ to all vendors on the following list

No Date

    IRF1104PBF Similar Part

    • IRF1104PBF MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC Infineon Technologies 2650 2.11
    • IRF1104PBF MOSFET N-CH 40V 100A TO220AB Infineon Technologies 9603 2.3
    • IRF1104PBF Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier 16729 1.768
    • IRF1104PBF Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG 25172 1.39
    • IRF1104PBF Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon 16729 1.768

    IRF1104PBF Chip related model

    Business contact email: info@finddatasheet.com