IPI072N10N3GXKSA1 IC Information manufacturer Infineon Technologies AG

Manufacturer model: IPI072N10N3GXKSA1
Function description: Power Field-Effect Transistor, 80A I(D), 100V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Manufacturer: Infineon Technologies AG
Data sheet: -
Category: Power Field-Effect Transistors

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IPI072N10N3GXKSA1 MOSFET N-CH 100V 80A TO262-3 Infineon Technologies 16215 0
IPI072N10N3GXKSA1 Power Field-Effect Transistor, 80A I(D), 100V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon 15129 2.85
IPI072N10N3GXKSA1 Rochester Electronics LLC 15132 0
IPI072N10N3GXKSA1 Power Field-Effect Transistor, 80A I(D), 100V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG 15165 2.85
IPI072N10N3GXKSA1 Power Field-Effect Transistor, 80A I(D), 100V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG 10409 2.85
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