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IPB120N04S4L02ATMA1 Datasheet, PDF

  • Manufacturer model: IPB120N04S4L02ATMA1
  • Function description: Power Field-Effect Transistor, 120A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN
  • Manufacturer: Infineon Technologies AG
  • Data sheet: -
  • Category: Power Field-Effect Transistors

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    IPB120N04S4L02ATMA1 Similar Part

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    • IPB120N04S4L02ATMA1 Power Field-Effect Transistor, 120A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN Infineon Technologies AG 11085 3.45

    IPB120N04S4L02ATMA1 Chip related model

    IPB120N04S4L02ATMA1 Alternate Parts

    FDB9406-F085 PSMN1R1-40BS,118

    IPB120N04S4L02ATMA1 Related Specifications

    6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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