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HGT1S10N120BNST Datasheet, PDF

  • Manufacturer model: HGT1S10N120BNST
  • Function description: IGBT 1200V 35A 298W TO263AB
  • Manufacturer: onsemi
  • Data sheet:
  • Category: Transistors - IGBTs - Single

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    HGT1S10N120BNST Similar Part

    • HGT1S10N120BNST IGBT 1200V 35A 298W TO263AB onsemi 5773 2.85
    • HGT1S10N120BNST Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation 27080 2.87

    HGT1S10N120BNST Chip related model

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    HGT1S10N120BNST Related Specifications

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