Function description:RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Manufacturer:FUJITSU Limited
Data sheet:
Category:RF Power Field-Effect Transistors
FLM7785-18DA Suppliers
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FLM7785-18DA Similar Part
FLM7785-18DA
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
FUJITSU Limited
13701
0
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