Function description:RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Manufacturer:FUJITSU Limited
Data sheet:
Category:RF Power Field-Effect Transistors
FLM6472-8D Suppliers
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FLM6472-8D Similar Part
FLM6472-8D
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
FUJITSU Limited
13713
0
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