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FLL810IQ-3C Datasheet, PDF

  • Manufacturer model: FLL810IQ-3C
  • Function description: RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IQ, 4 PIN
  • Manufacturer: SUMITOMO ELECTRIC Industries Ltd
  • Data sheet:
  • Category: RF Power Field-Effect Transistors

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    FLL810IQ-3C Similar Part

    • FLL810IQ-3C RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, CASE IQ, 5 PIN FUJITSU Limited 17259 0
    • FLL810IQ-3C RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IQ, 4 PIN SUMITOMO ELECTRIC Industries Ltd 17279 0
    • FLL810IQ-3C L BAND, GaAs, N-CHANNEL, RF POWER, JFET, CASE IQ, 5 PIN FUJITSU Semiconductor Limited 13758 0

    FLL810IQ-3C Chip related model

    FLL810IQ-3C Alternate Parts

    FLL810IQ-3C FLL810IQ-3C MWT1171HP MWT-871HP MWT1171SP NE650103M MSC88001 MGFC36V7177A-51 AT11571 HWF1687RA HWL36YRA HWF1682RA HWL34YRA HWL34YRF HWF1686RA HWL27YRA HWL30YRA HWF1681RA MGFC36V5258

    FLL810IQ-3C Related Specifications

    6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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