MRF8372R1 Datasheet, PDF
- Reference price Can ship immediately
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MRF8372R1 Alternate Parts
MRF8372R1 Part Attribute
- Description The RF Line NPN Silicon RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges.• Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60% (Typ) • State–of–the–Art Technology Fine Line Geometry Gold Top Metal and Wires Silicon Nitride Passivated Ion Implanted Arsenic Emitters • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. • Order MRF8372 in tape and reel packaging by adding suffix: R1 suffix = 500 units per reel R2 suffix = 2,500 units per reel
- Part No. MRF8372R1
- Manufacturer 恩智浦-NXP
MRF8372R1 Suppliers
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