T35L6432A Datasheet, PDF
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T35L6432A Part Attribute
- Description GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.FEATURES ■ Fast Access times: 4.5, 5, 6, 7, and 8ns ■ Fast clock speed: 125,100, 83, 66, and 50 MHz ■ Provide high performance 3-1-1-1 access rate ■ Fast OE access times: 4.5, 5 and 6ns ■ Single 3.3V +10%/-5% power supply ■ Common data inputs and data outputs ■ BYTE WRITE ENABLE and GLOBAL WRITE control ■ Three chip enables for depth expansion and address pipelining ■ Address, control, input, and output pipelined registers ■ Internally self-timed WRITE CYCLE ■ WRITE pass-through capability ■ Burst control pins ( interleaved or linear burst sequence) ■ High density, high speed packages ■ Low capacitive bus loading ■ High 30pF output drive capability at rated access time ■ SNOOZE MODE for reduced power standby ■ Single cycle disable ( PentiumTM BSRAM compatible )
- Part No. T35L6432A
- Manufacturer 凯钰-TM
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