STR1P2UH7 Datasheet, PDF
- Reference price Can ship immediately
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STR1P2UH7 Alternate Parts
STR1P2UH7 Part Attribute
- Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low on-resistance. The device also offers ultra-low capacitances for higher switching frequency operations.
- Part No. STR1P2UH7
- Manufacturer 意法-ST
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