STGWA30H65DFB2 Datasheet, PDF
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- Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. 主要特性 Maximum junction temperature : TJ = 175 °CLow VCE(sat) = 1.65 V (typ.) @ IC = 30 AVery fast and soft recovery co-packaged diodeMinimized tail currentTight parameter distributionLow thermal resistancePositive VCE(sat) temperature coefficient
- Part No. STGWA30H65DFB2
- Manufacturer 意法-ST
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