STGD6M65DF2 Datasheet, PDF
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STGD6M65DF2 Part Attribute
- Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
- Part No. STGD6M65DF2
- Manufacturer 意法-ST
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