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STB5N80K5 Datasheet, PDF

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STB5N80K5 Part Attribute

  • Description 这款超高压N-沟道功率MOSFET 采用MDmesh™ K5技术进行设计。该技术以创新专有的垂直工艺为基础。因此,在要求高功率密度和高效率的应用中,导通电阻显著降低,并具有极低的栅极电荷。
  • Part No. STB5N80K5
  • Manufacturer 意法-ST

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STB5N80K5
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