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SSU1N50B Datasheet, PDF

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SSU1N50B Part Attribute

  • Description 这些N沟道增强型功率场效应晶体管是采用飞兆专有的、平面条形DMOS技术生产的。 这一先进技术是专为最大限度地降低导通电阻,提供卓越的开关性能,以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。 这些器件非常适合高效的开关模式电源、功率因数校正和半桥电子灯整流器。
  • Part No. SSU1N50B
  • Manufacturer 安森美-ON

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SSU1N50B
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