NGTB50N65S1 Datasheet, PDF
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NGTB50N65S1 Part Attribute
- Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
- Part No. NGTB50N65S1
- Manufacturer 安森美-ON
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