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LX5535LQ Datasheet, PDF

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LX5535LQ Part Attribute

  • Description The LX5535 is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching. The device is manufactured with an InGaP/GaAs Hetero-junction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 5V, it provides 32 dB power gain between 2.4-2.5GHz, at a low quiescent current of 120mA. The output power for EVM(Error Vector Magnitude) of 3.5% is 25dBm (64QAM/54Mbps), where the PA consumes 260mA total DC current. The LX5535 is available in a 16-pin 3mm x 3mm micro-lead package (MLPQ-16L). The compact footprint, low profile, and thermal capability of the MLP package makes the LX5535 an ideal solution for high-gain power amplifier requirements for IEEE802.11b/g and WiMAX applications.
  • Part No. LX5535LQ
  • Manufacturer 美高森美-Microsemi

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