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IC41C16100S Datasheet, PDF

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  • Description DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IC41C16100S ideal for use in 16-, 32-bit wide data bus systems.FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs; tristate I/O • Refresh Interval:   Refresh Mode: 1,024 cycles /16 ms   RAS-Only, CAS-before-RAS(CBR), and Hidden   Self refresh Mode- 1,024 cycles / 128ms • JEDEC standard pinout • Single power supply:   5V ± 10% (IC41C16100S)   3.3V ± 10% (IC41LV16100S) • Byte Write and Byte Read operation via two CAS • Industrail Temperature Range -40°C to 85°C
  • Part No. IC41C16100S
  • Manufacturer 芯成-ISSI

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