DS1250W Datasheet, PDF
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DS1250W Alternate Parts
DS1250W Part Attribute
- Description DS1250W 3.3V 4096k NV SRAM为4,194,304位、全静态非易失SRAM，按照8位、524,288字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。DIP封装的DS1250W器件可以用来替代现有的512k x 8静态RAM，符合通用的单字节宽、32引脚DIP标准。PowerCap模块封装的DS1250W器件可以直接表面贴安装、通常与DS9034PC PowerCap配合构成一个完整的非易失SRAM模块。该器件没有写次数限制，可直接与微处理器接口、不需要额外的支持电路。
- Part No. DS1250W
- Manufacturer 亚德诺-ADI
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