DS1230Y Datasheet, PDF
- Reference price Can ship immediately
- TI remarks How much is DS1230Y here? The last 7 days of 2023, today's bidding, today's bidding, DS1230Y wholesale/procurement quotation,DS1230Y market trend sales ranking, DS1230Y quotation.
DS1230Y Alternate Parts
DS1230Y Part Attribute
- Description DS1230 256k非易失(NV) SRAM为262,144位、全静态非易失SRAM，按照8位、32,768字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。DIP封装的DS1230器件可以用来替代现有的32k x 8静态RAM，符合通用的单字节宽、28引脚DIP标准。DIP器件还与28256 EEPROM的引脚匹配，可直接替换并增强其性能。小尺寸模块封装的DS1230器件专为表面贴装应用设计。该器件没有写次数限制，可直接与微处理器接口、不需要额外的支持电路。
- Part No. DS1230Y
- Manufacturer 亚德诺-ADI
DS1230Y Suppliers
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