IRFL210TR Datasheet, PDF

• Manufacturer model: IRFL210TR
• Function description: Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
• Manufacturer: International Rectifier
• Data sheet: -
• Category: Power Field-Effect Transistors

IRFL210TR Suppliers

IRFL210TR Similar Part

• IRFL210TR MOSFET N-CH 200V 960MA SOT223 Vishay Siliconix 15724 0
• IRFL210TR Small Signal Field-Effect Transistor, 0.96A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Vishay 2315 0.45
• IRFL210TRPBF MOSFET N-Chan 200V 0.96 Amp Vishay Semiconductors 5697 0.88
• IRFL210TRPBF MOSFET N-CH 200V 960MA SOT223 Vishay Siliconix 9138 0.9
• IRFL210TRPBF-BE3 MOSFET 200V N-CH HEXFET Vishay / Siliconix 11531 0.88
• IRFL210TRPBF-BE3 MOSFET N-CH 200V 960MA SOT223 Vishay Siliconix 4054 0.9
• IRFL210TRPBF Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay Intertechnologies 2329 0.55
• IRFL210TRPBF Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay Huntington 16865 0.55
• IRFL210TRPBF Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay 16867 0.55
• IRFL210TRPBF Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 International Rectifier 16870 0.58

IRFL210TR Chip related model

IRFL210TR Alternate Parts

IRFL210TR Related Specifications