DF600R12IP4DBOSA1 Datasheet, PDF

• Manufacturer model: DF600R12IP4DBOSA1
• Function description: Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-8
• Manufacturer: Infineon Technologies AG
• Data sheet:
• Category: IGBTs

DF600R12IP4DBOSA1 Suppliers

DF600R12IP4DBOSA1 Similar Part

• DF600R12IP4DBOSA1 Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-8 Infineon Technologies AG 14395 0
• DF600R12IP4DBOSA1 IGBT MOD 1200V 600A 3350W Infineon Technologies 64236 520.12667
• DF600R12IP4DBOSA1 Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-8 Infineon 14508 0
• DF600R12IP4DBOSA1 Rochester Electronics LLC 14509 0
• DF600R12IP4DBOSA1 Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-8 Infineon Technologies AG 11223 0
• DF600R12IP4DBOSA1 Infineon Technologies 17332 0

DF600R12IP4DBOSA1 Chip related model

DF600R12IP4DBOSA1 Related Specifications