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SIHH21N65E-T1-GE3 Datasheet, PDF

  • Manufacturer model: SIHH21N65E-T1-GE3
  • Function description: Power Field-Effect Transistor, 20.3A I(D), 650V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
  • Manufacturer: Vishay Intertechnologies
  • Data sheet: -
  • Category: Power Field-Effect Transistors

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SIHH21N65E-T1-GE3 Chip related model

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SIHH21N60E-T1-GE3 SIHG21N60EF-GE3 IPP60R165CPXKSA1 IPB60R165CPATMA1

SIHH21N65E-T1-GE3 Related Specifications

6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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