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KSD2012-G Datasheet, PDF

  • Manufacturer model: KSD2012-G
  • Function description: Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
  • Manufacturer: Samsung Semiconductor
  • Data sheet:
  • Category: Power Bipolar Transistors

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    KSD2012-G Similar Part

    • KSD2012-G Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN Samsung Semiconductor 1055 0

    KSD2012-G Chip related model

    KSD2012-G Alternate Parts

    KSD1406-G FJPF5200RTU 2SD1444AQ 2SD1957F 2SD2107C KSC2335FY KSC5042F KSC3569 2SD2466AP 2SD1776AP KSC5021FO 2SD2156AP KSC5021FRTU 2SD2629 KSC5042FTU KSD1362-O KSD2012-Y KSD1588 2SD1763 KSD1273Q

    KSD2012-G Related Specifications

    6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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