IRFS350 Datasheet, PDF

• Manufacturer model: IRFS350
• Function description: Power Field-Effect Transistor, 10.4A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, FULL PACK-3
• Manufacturer: Samsung Semiconductor
• Data sheet:
• Category: Power Field-Effect Transistors

IRFS350 Suppliers

IRFS350 Similar Part

• IRFS350 Power Field-Effect Transistor, 10.4A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, FULL PACK-3 Samsung Semiconductor 10649 2
• IRFS350 Power Field-Effect Transistor, 11.5A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN Fairchild Semiconductor Corporation 10664 2
• IRFS3507PBF Power Field-Effect Transistor, 75A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier 315 0
• IRFS3507 Power Field-Effect Transistor, 75A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier 341 0
• IRFS3507 MOSFET N-CH 75V 97A D2PAK Infineon Technologies 11628 0
• IRFS3507TRLPBF MOSFET N-CH 75V 97A D2PAK Infineon Technologies 2825 0
• IRFS350A MOSFET N-CH 400V 11.5A TO3PF onsemi 5729 0
• IRFS350A MOSFET N-CH 400V 11.5A TO3PF Fairchild Semiconductor 2404 2.28
• IRFS3507TRR Power Field-Effect Transistor, 75A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier 340 0
• IRFS3507TRL Power Field-Effect Transistor, 75A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier 341 0

IRFS350 Chip related model

IRFS350 Alternate Parts

IRFS350 Related Specifications