RFD16N06LE IC Information manufacturer Harris Semiconductor

Manufacturer model: RFD16N06LE
Function description: Power Field-Effect Transistor, 16A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Manufacturer: Harris Semiconductor
Data sheet:
Category: Power Field-Effect Transistors

Part Number

Quantity

Connect name

Phone

Remark

*Submit information and send RFQ to all vendors on the following list

RFD16N06LE Power Field-Effect Transistor, 16A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor 4421 0
RFD16N06LESM9A Power Field-Effect Transistor, 16A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild 7301 1.902
RFD16N06LESM9A MOSFET N-CH 60V 16A TO252AA onsemi 5572 1.96
RFD16N06LESM9A Power Field-Effect Transistor, 16A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation 17021 1.902
RFD16N06LESM 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation 17027 0
RFD16N06LESM Power Field-Effect Transistor, 16A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor 955 0
RFD16N06LESM N-Channel Logic Level Power MOSFET 60V, 16A, 47mΩ 安森美-ON 16871 0
RFD16N06LESM9A N-Channel Logic Level Power MOSFET 60V, 16A, 47mΩ, 2500-REEL ON Semiconductor 7302 1.902
1N4752G 33V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 Taiwan Semiconductor Manufacturing Company Limited 13050 0
1N4752ATA 33V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, GLASS, CASE 59-03, 2 PIN Motorola Mobility LLC 13060 0