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MJD127-T1 Datasheet, PDF

  • Manufacturer model: MJD127-T1
  • Function description: Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3
  • Manufacturer: Samsung Semiconductor
  • Data sheet: -
  • Category: Power Bipolar Transistors

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MJD127-T1 Chip related model

MJD127-T1 Alternate Parts

NJVMJD127T4G MJD127 MJD127-TP-HF KSH127-TF MJD127 CJD127BK MJD127TF KSH127TM KSH127TF CJD127 MJD127 KSH127 KSH127 CJD127TR13 MJD127T4 MJD127 MJD127-TP MJD127T4G MJD127T4 MJD127G

MJD127-T1 Related Specifications

AR06DTC7501 AR02DTD2492 GA1812A470KXBAT31G GA1812A470KXCAR31G GA1812A470KXCAT31G GA1812A470KXEAR31G GA1812A470KXEAT31G AR06DTC1004 AR06DTC2003 GA1812A470KXHAR31G GA1812A470KXHAT31G AR02DTD1433 GA1812A470KXLAT31G WF06W7501ATL AR02DTC5102 GA1812A471FBBAR31G GA1812A471FBBAT31G DF02R026NA3 GA1812A471FBCAT31G GA1812A471FBEAR31G R20507RR03Q GA1812A471FBGAR31G RTX023002DEH4 AR03BTC9760 AR06DTC2002 18B25WR-03M GA1812A471FXAAR31G SU9V-R03090 SU9V-R02140 GA1812A471FXCAR31G RTX023002DETH MCS0402-500.5%ATE030K 239044763003L TC0525D2002T5E SBR0230T5-7 GA1812A471FXLAT31G GA1812A471GBAAR31G GA1812A471GBAAT31G GA1812A471GBBAR31G GA1812A471GBBAT31G

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