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MGFX38V0510 Datasheet, PDF

  • Manufacturer model: MGFX38V0510
  • Function description: RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2
  • Manufacturer: Mitsubishi Electric
  • Data sheet:
  • Category: RF Power Field-Effect Transistors

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    MGFX38V0510 Similar Part

    • MGFX38V0510 RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2 Mitsubishi Electric 17289 0
    • MGFX38V0510-51 RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET Mitsubishi Electric 17297 0
    • MGFX38V0510-01 RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN Mitsubishi Electric 17318 0

    MGFX38V0510 Chip related model

    MGFX38V0510 Alternate Parts

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    MGFX38V0510 Related Specifications

    6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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