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MGFS45V2123 Datasheet, PDF

  • Manufacturer model: MGFS45V2123
  • Function description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN
  • Manufacturer: Mitsubishi Electric
  • Data sheet:
  • Category: RF Power Field-Effect Transistors

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MGFS45V2123 Similar Part

  • MGFS45V2123 RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN Mitsubishi Electric 17224 0
  • MGFS45V2123A RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-51, 2 PIN Mitsubishi Electric 17219 0
  • MGFS45V2123A-51 Transistor Mitsubishi Electric 17304 0
  • MGFS45V2123A-01 Transistor Mitsubishi Electric 17310 0

MGFS45V2123 Chip related model

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MGFS45V2123 Related Specifications

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