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MGFC45V5867 Datasheet, PDF

  • Manufacturer model: MGFC45V5867
  • Function description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 3 PIN
  • Manufacturer: Mitsubishi Electric
  • Data sheet:
  • Category: RF Power Field-Effect Transistors

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MGFC45V5867 Similar Part

  • MGFC45V5867 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 3 PIN Mitsubishi Electric 17277 0
  • MGFC45V5867 5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET 三菱-MITSUBISHI 9098 0

MGFC45V5867 Chip related model

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MGFC45V5867 Related Specifications

6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

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