Free resource for electronic component datasheets

Chip data Inventory inquiry Alternative model
Preview Similar Part

MGFC42V3436 Datasheet, PDF

  • Manufacturer model: MGFC42V3436
  • Function description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN
  • Manufacturer: Mitsubishi Electric
  • Data sheet:
  • Category: RF Power Field-Effect Transistors

MGFC42V3436 Suppliers

*Submit information and send RFQ to all vendors on the following list

See More

MGFC42V3436 Similar Part

  • MGFC42V3436 RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN Mitsubishi Electric 17296 0
  • MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET 三菱-MITSUBISHI 8880 0
  • MGFC42V3436-51 Transistor Mitsubishi Electric 17308 0
  • MGFC42V3436-01 Transistor Mitsubishi Electric 13759 0

MGFC42V3436 Chip related model

MGFC42V3436 Alternate Parts

TIM3742-30SL-341 TIM4450-45SL TIM5964-60SL-422 TIM7179-12UL TIM7785-45SL TIM5964-16SL-422 TIM5964-8SL-251 TIM7785-12UL TIM5964-45SL MGFC45B3436B TIM6472-12UL TIM7179-16UL TIM3742-25UL TIM6472-45SL TIM5359-16UL TIM5964-60SL-251 TIM4450-12UL TPM2626-30-301 TIM5964-16SL-251 TIM7785-35SL

MGFC42V3436 Related Specifications

6-2355644-4 1-2355626-1 2-2355627-1 2379513-1 8-2355626-1 1-2379513-1 8-2355632-1 2-2355626-1 1-2355627-1 6-2355626-4

Business contact email: info@finddatasheet.com

By clicking “Accept All Cookies”, you agree to the storing of cookies on your device to enhance site navigation, analyse site usage, and assist in our marketing efforts.