IRLL024N IC Information manufacturer Infineon Technologies AG

Manufacturer model: IRLL024N
Function description: Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN
Manufacturer: Infineon Technologies AG
Data sheet:
Category: Power Field-Effect Transistors

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IRLL024NPBF MOSFET N-CH 55V 3.1A SOT223 Infineon Technologies 45451 0
IRLL024NPBF Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN International Rectifier 16729 0.62
IRLL024NTRPBF MOSFET N-CH 55V 3.1A SOT223 Infineon Technologies 10128 1.08
IRLL024N infineon 13314 0.91
IRLL024NPBF-INF HEXFET POWER MOSFET Infineon Technologies 6165 0.24
IRLL024NPBF Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4 Infineon Technologies AG 16690 0.62
IRLL024N Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN Infineon Technologies AG 16699 0
IRLL024NTR Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, Infineon Technologies AG 16691 1.1
IRLL024NTRPBF Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4 Infineon Technologies AG 16730 1.536
IRLL024NPBF ADVANCED PROCESS TECHNOLOGY 英飞凌-Infineon 17075 0