IRFM360 Datasheet, PDF

• Manufacturer model: IRFM360
• Function description: Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN
• Manufacturer: TT Electronics Resistors
• Data sheet:
• Category: Power Field-Effect Transistors

IRFM360 Suppliers

IRFM360 Similar Part

• IRFM360 23A, 400V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 5451 0
• IRFM360 Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors 5723 0
• IRFM360 infineon 18981 0
• IRFM360-JQR-B 23A, 400V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 5454 0
• IRFM360-JQR-BR1 23A, 400V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 5455 0
• IRFM360R1 23A, 400V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 5452 0
• IRFM360PBF Power Field-Effect Transistor, 23A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Infineon Technologies AG 5740 0
• IRFM360D Power Field-Effect Transistor, 23A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Infineon Technologies AG 5274 0
• IRFM360U Power Field-Effect Transistor, 23A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Infineon Technologies AG 3963 0
• IRFM360B infineon 19027 0

IRFM360 Chip related model

IRFM360 Alternate Parts

IRFM360 Related Specifications