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IRFBE30STRLPBF Datasheet, PDF

  • Manufacturer model: IRFBE30STRLPBF
  • Function description: Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
  • Manufacturer: Vishay Huntington
  • Data sheet: -
  • Category: Power Field-Effect Transistors

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IRFBE30STRLPBF Similar Part

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  • IRFBE30STRLPBF Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Huntington 502 7.33
  • IRFBE30STRLPBF Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay 506 7.33

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