IRFBC30AL IC Information manufacturer Vishay Intertechnologies

Manufacturer model: IRFBC30AL
Function description: Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Manufacturer: Vishay Intertechnologies
Data sheet: -
Category: Power Field-Effect Transistors

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IRFBC30AL MOSFET N-CH 600V 3.6A I2PAK Vishay Siliconix 18149 0
IRFBC30AL Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN Vishay Intertechnologies 11272 0
IRFBC30ALPBF MOSFET N-CH 600V 3.6A I2PAK Vishay Siliconix 9441 0.88436
IRFBC30ALPBF MOSFET 600V N-CH HEXFET TO-26 Vishay Semiconductors 19420 1.77
IRFBC30AS/SiHFBC30AS/IRFBC30AL/SiHFBC30AL Power MOSFET 威世-Vishay 4762 0
IRFBC30ALPBF MOSFET N-CH600V HEXFET MOSFET TO-26 威世-Vishay 20773 0
IRFBC30ALPBF Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN Vishay Huntington 11258 1.83
IRFBC30ALPBF Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN Vishay 11258 1.83
IRFBC30ALPBF Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier 11258 1.83
1N4752G 33V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 Taiwan Semiconductor Manufacturing Company Limited 13050 0