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IPD082N10N3GXT Datasheet, PDF

  • Manufacturer model: IPD082N10N3GXT
  • Function description: Power Field-Effect Transistor, 80A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3
  • Manufacturer: Infineon Technologies AG
  • Data sheet: -
  • Category: Power Field-Effect Transistors

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IPD082N10N3GXT Chip related model

IPD082N10N3GXT Alternate Parts

IPB083N10N3GATMA1 STB100N10F7

IPD082N10N3GXT Related Specifications

AR06DTC7501 AR02DTD2492 GA1812A470KXBAT31G GA1812A470KXCAR31G GA1812A470KXCAT31G GA1812A470KXEAR31G GA1812A470KXEAT31G AR06DTC1004 AR06DTC2003 GA1812A470KXHAR31G GA1812A470KXHAT31G AR02DTD1433 GA1812A470KXLAT31G WF06W7501ATL AR02DTC5102 GA1812A471FBBAR31G GA1812A471FBBAT31G DF02R026NA3 GA1812A471FBCAT31G GA1812A471FBEAR31G R20507RR03Q GA1812A471FBGAR31G RTX023002DEH4 AR03BTC9760 AR06DTC2002 18B25WR-03M GA1812A471FXAAR31G SU9V-R03090 SU9V-R02140 GA1812A471FXCAR31G RTX023002DETH MCS0402-500.5%ATE030K 239044763003L TC0525D2002T5E SBR0230T5-7 GA1812A471FXLAT31G GA1812A471GBAAR31G GA1812A471GBAAT31G GA1812A471GBBAR31G GA1812A471GBBAT31G

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